IPC70N04S54R6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 70A 8TDSON-34
$1.07
Available to order
Reference Price (USD)
5,000+
$0.32670
10,000+
$0.31460
25,000+
$0.30800
Exquisite packaging
Discount
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Enhance your electronic projects with the IPC70N04S54R6ATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPC70N04S54R6ATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 17µA
- Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-34
- Package / Case: 8-PowerTDFN
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