IPD30N12S3L31ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CHANNEL_100+
$0.68
Available to order
Reference Price (USD)
2,500+
$0.51020
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IPD30N12S3L31ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPD30N12S3L31ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Alpha & Omega Semiconductor Inc.
AOT15S60L
Toshiba Semiconductor and Storage
SSM3J356R,LF
Panjit International Inc.
PJA3449_R1_00001
Wolfspeed, Inc.
C3M0065090D
Alpha & Omega Semiconductor Inc.
AOW15S60
Fairchild Semiconductor
FQPF6N40CT
Vishay Siliconix
SQM120N06-3M5L_GE3
Infineon Technologies
AUIRF3315S
Vishay Siliconix
SI2306BDS-T1-GE3
Vishay Siliconix