IPD40DP06NMATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 4.3A TO252-3
$0.48
Available to order
Reference Price (USD)
1+
$0.47980
500+
$0.475002
1000+
$0.470204
1500+
$0.465406
2000+
$0.460608
2500+
$0.45581
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPD40DP06NMATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPD40DP06NMATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 166µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 19W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
BSP179H6327XTSA1
Panjit International Inc.
PJE8404_R1_00001
STMicroelectronics
STW70N60DM2
onsemi
NTMFS5C612NT1G-TE
STMicroelectronics
STF16N90K5
Vishay Siliconix
SQJA70EP-T1_BE3
onsemi
NTBGS004N10G
Vishay Siliconix
SISA96DN-T1-GE3
Infineon Technologies
IPW60R018CFD7XKSA1
IXYS Integrated Circuits Division