IPD50R2K0CEAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 2.4A TO252-3
$0.66
Available to order
Reference Price (USD)
2,500+
$0.16743
Exquisite packaging
Discount
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The IPD50R2K0CEAUMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPD50R2K0CEAUMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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