IPD60R380C6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 10.6A TO252-3
$2.56
Available to order
Reference Price (USD)
2,500+
$0.95107
5,000+
$0.91984
12,500+
$0.90280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPD60R380C6ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPD60R380C6ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIHP25N60EFL-BE3
Fairchild Semiconductor
FDS6688S
Renesas Electronics America Inc
2SK1658-T1-A
onsemi
FDP2572
IXYS
IXFN140N25T
onsemi
NVMFS5C645NLWFAFT1G
Nexperia USA Inc.
PMZ600UNELYL
Diodes Incorporated
DMPH4015SK3-13
Diodes Incorporated
DMP2070UQ-7
STMicroelectronics