IPD640N06LGBTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 18A TO252-3
$0.35
Available to order
Reference Price (USD)
1+
$0.35460
500+
$0.351054
1000+
$0.347508
1500+
$0.343962
2000+
$0.340416
2500+
$0.33687
Exquisite packaging
Discount
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Enhance your electronic projects with the IPD640N06LGBTMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPD640N06LGBTMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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