IPD65R660CFDAATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 6A TO252-3
$2.71
Available to order
Reference Price (USD)
2,500+
$0.89248
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPD65R660CFDAATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPD65R660CFDAATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 214.55µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Alpha & Omega Semiconductor Inc.
AOD444
Alpha & Omega Semiconductor Inc.
AOTF256L
Nexperia USA Inc.
PSMN7R0-100BS,118
STMicroelectronics
STR2P3LLH6
Rohm Semiconductor
RS1E240GNTB
Infineon Technologies
SPP15P10PLHXKSA1
Alpha & Omega Semiconductor Inc.
AO3407A
Toshiba Semiconductor and Storage
SSM3K15AFU,LF
Infineon Technologies
IPD25DP06LMATMA1
IXYS