IPD70R600P7SAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 8.5A TO252-3
$1.06
Available to order
Reference Price (USD)
2,500+
$0.38413
5,000+
$0.36046
12,500+
$0.34862
25,000+
$0.34217
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IPD70R600P7SAUMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPD70R600P7SAUMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
AUIRF4905
Infineon Technologies
IPA60R199CPXKSA1
Panjit International Inc.
PJQ5463A-AU_R2_000A1
Texas Instruments
CSD17483F4
Vishay Siliconix
SIHP100N60E-GE3
Diodes Incorporated
DMP1012UFDF-13
Infineon Technologies
IPA60R099C6XKSA1
Diodes Incorporated
DMP3021SSS-13
Vishay Siliconix
IRFL214TRPBF-BE3
Alpha & Omega Semiconductor Inc.