IPG20N04S4L11AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
$1.30
Available to order
Reference Price (USD)
5,000+
$0.48103
10,000+
$0.46295
Exquisite packaging
Discount
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Elevate your electronics with the IPG20N04S4L11AATMA1 from Infineon Technologies, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the IPG20N04S4L11AATMA1 provides the reliability and efficiency you need. Infineon Technologies's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
- Power - Max: 41W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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