IPG20N06S2L35AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 55V 2A 8TDSON
$1.46
Available to order
Reference Price (USD)
5,000+
$0.67298
10,000+
$0.64768
Exquisite packaging
Discount
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Upgrade your electronic designs with the IPG20N06S2L35AATMA1 by Infineon Technologies, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the IPG20N06S2L35AATMA1 ensures energy efficiency and robust performance. Infineon Technologies's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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