IPG20N06S2L50ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 55V 20A 8TDSON
$0.63
Available to order
Reference Price (USD)
5,000+
$0.50532
Exquisite packaging
Discount
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The IPG20N06S2L50ATMA1 by Infineon Technologies is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the IPG20N06S2L50ATMA1 provides reliable operation under stringent conditions. Infineon Technologies's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 19µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
- Power - Max: 51W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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Infineon Technologies