IPG20N06S4L11AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 8TDSON
$1.12
Available to order
Reference Price (USD)
5,000+
$0.95281
Exquisite packaging
Discount
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Discover the high-performance IPG20N06S4L11AATMA1 from Infineon Technologies, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the IPG20N06S4L11AATMA1 delivers unmatched performance. Trust Infineon Technologies's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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Infineon Technologies