IPI030N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 100A TO262-3
$4.67
Available to order
Reference Price (USD)
500+
$3.35874
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IPI030N10N3GXKSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPI030N10N3GXKSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Infineon Technologies
IPW65R041CFD7XKSA1
Vishay Siliconix
SI4874BDY-T1-GE3
STMicroelectronics
STD35P6LLF6
STMicroelectronics
STL2N80K5
onsemi
NTNUS3171PZT5G
IXYS
IXFH30N60X
Vishay Siliconix
SI1031R-T1-GE3
Rohm Semiconductor
RD3L07BATTL1
Fairchild Semiconductor
FDS3612
Fairchild Semiconductor