IPI032N06N3GAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 120A TO262-3
$1.46
Available to order
Reference Price (USD)
1+
$3.06000
10+
$2.76600
100+
$2.22260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IPI032N06N3GAKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPI032N06N3GAKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 118µA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SQJA76EP-T1_BE3
Fairchild Semiconductor
FDFS2P753Z
NXP Semiconductors
PSMN085-150K,518
Sanyo
2SK3702
onsemi
FQP13N10L
Diodes Incorporated
ZXMP10A18GTA
Micro Commercial Co
SI3402-TP
Diodes Incorporated
BSS84Q-13-F
Vishay Siliconix
IRFR310PBF
onsemi