IPI076N12N3GAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 120V 100A TO262-3
$2.45
Available to order
Reference Price (USD)
500+
$1.84500
Exquisite packaging
Discount
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The IPI076N12N3GAKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPI076N12N3GAKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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