IPI320N20N3GAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 34A TO262-3
$2.60
Available to order
Reference Price (USD)
500+
$1.87348
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPI320N20N3GAKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPI320N20N3GAKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Alpha & Omega Semiconductor Inc.
AO7415
onsemi
NTMFS4C10NT3G
Infineon Technologies
IRFP064NPBF
IXYS
IXFN60N80P
Vishay Siliconix
SIR846ADP-T1-GE3
Renesas Electronics America Inc
UPA507TE-T1-AT
Alpha & Omega Semiconductor Inc.
AOK22N50L
Microchip Technology
APTM100UM65SAG
Panjit International Inc.
PJQ2461_R1_00001
Taiwan Semiconductor Corporation