IPI50R199CPXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 17A TO262-3
$1.33
Available to order
Reference Price (USD)
1+
$1.33000
500+
$1.3167
1000+
$1.3034
1500+
$1.2901
2000+
$1.2768
2500+
$1.2635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IPI50R199CPXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPI50R199CPXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 660µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
IXYS
IXTY2N100P
NXP USA Inc.
BUK7E07-55B,127
onsemi
3LN01M-TL-H
Rohm Semiconductor
RSJ250P10FRATL
Goford Semiconductor
GC11N65M
Taiwan Semiconductor Corporation
TSM036N03PQ56 RLG
Rohm Semiconductor
SCT4018KRC15
onsemi
NTB6413ANT4G
NXP Semiconductors
BUK6E3R2-55C,127
Panjit International Inc.