IPI65R190C6XKSA1
Infineon Technologies
Infineon Technologies
IPI65R190C6 - 650V-700V COOLMOS
$1.93
Available to order
Reference Price (USD)
500+
$2.07670
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPI65R190C6XKSA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
NVMFS6H801NLT1G
onsemi
NTMS4700NR2G
STMicroelectronics
STP6NK60Z
Infineon Technologies
SPD04N60S5
onsemi
FDMS5352
Toshiba Semiconductor and Storage
TPWR7904PB,L1XHQ
Renesas Electronics America Inc
NP20P06SLG-E1-AY
onsemi
HUF76439S3ST
STMicroelectronics
STP160N75F3
Fairchild Semiconductor