IPI80N06S407AKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 80A TO262-3
$0.82
Available to order
Reference Price (USD)
500+
$1.18830
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPI80N06S407AKSA2 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPI80N06S407AKSA2 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SISS80DN-T1-GE3
Infineon Technologies
IPD60R3K3C6ATMA1
NXP USA Inc.
BUK7514-55A,127
Micro Commercial Co
MCQ18N03-TP
Fairchild Semiconductor
FQP5N80
IXYS Integrated Circuits Division
CPC3708ZTR
Alpha & Omega Semiconductor Inc.
AOTF5N50
Renesas Electronics America Inc
RJK0395DPA-00#J53
onsemi
FDMS86263P
onsemi