IPLK60R1K0PFD7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 5.2A THIN-PAK
$1.53
Available to order
Reference Price (USD)
1+
$1.53000
500+
$1.5147
1000+
$1.4994
1500+
$1.4841
2000+
$1.4688
2500+
$1.4535
Exquisite packaging
Discount
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Upgrade your designs with the IPLK60R1K0PFD7ATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPLK60R1K0PFD7ATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 31.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-52
- Package / Case: 8-PowerTDFN
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