IPP016N08NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V
$4.29
Available to order
Reference Price (USD)
1+
$4.29000
500+
$4.2471
1000+
$4.2042
1500+
$4.1613
2000+
$4.1184
2500+
$4.0755
Exquisite packaging
Discount
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The IPP016N08NF2SAKMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPP016N08NF2SAKMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 196A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 267µA
- Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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