IPP052N06L3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 80A TO220-3
$1.80
Available to order
Reference Price (USD)
1+
$1.62000
10+
$1.44000
100+
$1.15400
500+
$0.91200
1,000+
$0.73600
Exquisite packaging
Discount
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The IPP052N06L3GXKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP052N06L3GXKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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