IPP052N08N5AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 80A TO220-3
$2.93
Available to order
Reference Price (USD)
1+
$2.56000
10+
$2.31600
100+
$1.86070
500+
$1.44722
1,000+
$1.19912
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP052N08N5AKSA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 66µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Wolfspeed, Inc.
C3M0021120D
Diodes Incorporated
DMT6015LSS-13
Diodes Incorporated
DMTH4014SPSW-13
Fairchild Semiconductor
FDU2572
Infineon Technologies
BSC061N08NS5ATMA1
STMicroelectronics
STP23N80K5
Alpha & Omega Semiconductor Inc.
AON6154
onsemi
FCPF13N60NT
Renesas Electronics America Inc
2SK3054-T1-A
Fairchild Semiconductor