IPP100N04S303AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 100A TO220-3
$2.03
Available to order
Reference Price (USD)
500+
$1.56426
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP100N04S303AKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP100N04S303AKSA1 for their critical applications.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
DMT43M8LFV-13
Vishay Siliconix
SISA12BDN-T1-GE3
Diodes Incorporated
DMPH6023SK3Q-13
Sanken
FKI07174
Infineon Technologies
IPB080N06N G
IXYS
IXTY44N10T
onsemi
NTD60N02R-1G
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL05N04A-F2-0000HF
Diodes Incorporated
DMP2037U-13
Diodes Incorporated