IPP60R080P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 37A TO220-3
$6.85
Available to order
Reference Price (USD)
1+
$6.31000
10+
$5.66700
100+
$4.71270
500+
$3.88584
1,000+
$3.33458
Exquisite packaging
Discount
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The IPP60R080P7XKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPP60R080P7XKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 129W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Infineon Technologies