IPP60R125C6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 30A TO220-3
$7.30
Available to order
Reference Price (USD)
1+
$6.01000
10+
$5.40300
100+
$4.49370
500+
$3.70520
1,000+
$3.17957
Exquisite packaging
Discount
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Optimize your power electronics with the IPP60R125C6XKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPP60R125C6XKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 219W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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