IPP60R160P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 20A TO220-3-1
$3.80
Available to order
Reference Price (USD)
1+
$3.80000
500+
$3.762
1000+
$3.724
1500+
$3.686
2000+
$3.648
2500+
$3.61
Exquisite packaging
Discount
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Optimize your power electronics with the IPP60R160P7XKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPP60R160P7XKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1317 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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