IPP60R190P6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 20.2A TO220-3
$3.64
Available to order
Reference Price (USD)
1+
$3.23000
10+
$2.93500
100+
$2.39160
500+
$1.89800
1,000+
$1.60186
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP60R190P6XKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP60R190P6XKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 630µ
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Toshiba Semiconductor and Storage
SSM3J132TU,LF
Vishay Siliconix
IRFI830GPBF
IXYS
IXFN110N85X
Toshiba Semiconductor and Storage
TK14A65W5,S5X
Vishay Siliconix
SIHFZ48S-GE3
onsemi
FQP3N80C
Diodes Incorporated
DMP31D7L-7
Fairchild Semiconductor
ISL9N302AS3
Vishay Siliconix
SISS42LDN-T1-GE3
Fairchild Semiconductor