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IPP65R050CFD7AAKSA1

Infineon Technologies
IPP65R050CFD7AAKSA1 Preview
Infineon Technologies
MOSFET N-CH 650V 45A TO220-3
$14.83
Available to order
Reference Price (USD)
1+
$14.83000
500+
$14.6817
1000+
$14.5334
1500+
$14.3851
2000+
$14.2368
2500+
$14.0885
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
  • Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3

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