IPP65R050CFD7AAKSA1
Infineon Technologies

Infineon Technologies
MOSFET N-CH 650V 45A TO220-3
$14.83
Available to order
Reference Price (USD)
1+
$14.83000
500+
$14.6817
1000+
$14.5334
1500+
$14.3851
2000+
$14.2368
2500+
$14.0885
Exquisite packaging
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The IPP65R050CFD7AAKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPP65R050CFD7AAKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3