IPP65R155CFD7XKSA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW
$4.87
Available to order
Reference Price (USD)
1+
$4.87000
500+
$4.8213
1000+
$4.7726
1500+
$4.7239
2000+
$4.6752
2500+
$4.6265
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP65R155CFD7XKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPP65R155CFD7XKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 77W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
onsemi
NVTR0202PLT1G
Vishay Siliconix
SIHP8N50D-E3
IXYS
IXFA10N80P
Infineon Technologies
IPI111N15N3GAKSA1
STMicroelectronics
STF34N65M5
onsemi
FDBL86563-F085
Infineon Technologies
BSC120N03LSGATMA1
Fairchild Semiconductor
FQPF5N60CYDTU
IXYS
IXTA1R4N120P
Toshiba Semiconductor and Storage