IPP80P03P4L04AKSA2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 80A TO220-3
$3.30
Available to order
Reference Price (USD)
1+
$3.30000
500+
$3.267
1000+
$3.234
1500+
$3.201
2000+
$3.168
2500+
$3.135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP80P03P4L04AKSA2 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP80P03P4L04AKSA2 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 137W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Nexperia USA Inc.
BUK763R4-30B,118
IXYS
IXTH7P50
Infineon Technologies
BSC047N08NS3GATMA1
onsemi
NTD18N06-1G
NXP USA Inc.
PMN70XP115
Microchip Technology
APT75F50L
Panjit International Inc.
PJA3431_R1_00001
Vishay Siliconix
SIHF640S-GE3
Vishay Siliconix
SQ3425EV-T1_GE3
STMicroelectronics