IPP90R1K2C3XKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 5.1A TO220-3
$1.42
Available to order
Reference Price (USD)
1+
$1.42338
500+
$1.4091462
1000+
$1.3949124
1500+
$1.3806786
2000+
$1.3664448
2500+
$1.352211
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IPP90R1K2C3XKSA2 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPP90R1K2C3XKSA2 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
onsemi
NVMFS015N10MCLT1G
STMicroelectronics
STP13N95K3
STMicroelectronics
STB11NK50ZT4
Nexperia USA Inc.
PMV30XPAR
NXP USA Inc.
BUK954R4-80E,127
Microchip Technology
APT10M19SVFRG
onsemi
FQD6N40CTM
Infineon Technologies
AUIRFR5305
Infineon Technologies
BSC080N03MSGATMA1
STMicroelectronics