IPS80R2K0P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 3A TO251-3
$0.43
Available to order
Reference Price (USD)
1+
$0.97000
10+
$0.85900
100+
$0.67890
500+
$0.52648
1,000+
$0.41564
Exquisite packaging
Discount
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The IPS80R2K0P7AKMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPS80R2K0P7AKMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-342
- Package / Case: TO-251-3 Stub Leads, IPak
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