IPSA70R1K2P7SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 4.5A TO251-3
$0.90
Available to order
Reference Price (USD)
1+
$0.69000
10+
$0.59900
100+
$0.46240
500+
$0.34254
1,000+
$0.27403
Exquisite packaging
Discount
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The IPSA70R1K2P7SAKMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPSA70R1K2P7SAKMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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