IPTC015N10NM5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 35A/354A HDSOP
$8.57
Available to order
Reference Price (USD)
1+
$8.57000
500+
$8.4843
1000+
$8.3986
1500+
$8.3129
2000+
$8.2272
2500+
$8.1415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IPTC015N10NM5ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPTC015N10NM5ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
Related Products
STMicroelectronics
STF100N6F7
Diodes Incorporated
DMP2022LSS-13
IXYS
IXFK200N10P
Toshiba Semiconductor and Storage
TK12A60D(STA4,Q,M)
Nexperia USA Inc.
PSMN6R0-25YLDX
NXP Semiconductors
PSMN018-100ESFQ
onsemi
FCPF600N65S3R0L-F154
onsemi
FDB045AN08A0-F085
IXYS
IXFT18N100Q3
Vishay Siliconix