IPW60R024P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 101A TO247-3-41
$16.98
Available to order
Reference Price (USD)
1+
$16.98000
500+
$16.8102
1000+
$16.6404
1500+
$16.4706
2000+
$16.3008
2500+
$16.131
Exquisite packaging
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The IPW60R024P7XKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPW60R024P7XKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.03mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 291W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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