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IPW60R031CFD7XKSA1

Infineon Technologies
IPW60R031CFD7XKSA1 Preview
Infineon Technologies
MOSFET N-CH 650V 63A TO247-3
$15.14
Available to order
Reference Price (USD)
1+
$16.03000
10+
$14.68000
240+
$12.65292
720+
$10.96382
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
  • Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3

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