IPW60R037P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 76A TO247-3
$13.92
Available to order
Reference Price (USD)
1+
$12.68000
10+
$11.49200
240+
$9.59488
720+
$8.17181
1,200+
$7.22310
Exquisite packaging
Discount
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Optimize your power electronics with the IPW60R037P7XKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPW60R037P7XKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.48mA
- Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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