IPW60R041P6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 77.5A TO247-3
$15.42
Available to order
Reference Price (USD)
1+
$14.26000
10+
$12.92800
240+
$10.79304
720+
$9.19226
1,200+
$8.12509
Exquisite packaging
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Optimize your power electronics with the IPW60R041P6FKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPW60R041P6FKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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