IPW60R099P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 31A TO247-3
$7.00
Available to order
Reference Price (USD)
1+
$5.96000
10+
$5.35200
240+
$4.45067
720+
$3.66972
1,200+
$3.14912
Exquisite packaging
Discount
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The IPW60R099P7XKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPW60R099P7XKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 530µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 117W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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