IPW60R125C6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 30A TO247-3
$7.78
Available to order
Reference Price (USD)
1+
$6.27000
10+
$5.64400
240+
$4.69342
720+
$3.86992
1,200+
$3.32091
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPW60R125C6FKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPW60R125C6FKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 219W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
Alpha & Omega Semiconductor Inc.
AON7538
Infineon Technologies
BSS123NH6327XTSA1
NXP USA Inc.
BUK9E04-40A,127
Vishay Siliconix
SI2356DS-T1-BE3
Diodes Incorporated
DMN3025LFV-13
onsemi
FDMC510P
Vishay Siliconix
SISS22DN-T1-GE3
onsemi
NTP85N03
STMicroelectronics
STI300N4F6
Infineon Technologies