IPW65R095C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 24A TO247
$8.24
Available to order
Reference Price (USD)
1+
$7.40000
10+
$6.65800
240+
$5.53696
720+
$4.56543
1,200+
$3.91776
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IPW65R095C7XKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPW65R095C7XKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
Microchip Technology
APT38F80L
onsemi
NTMFS5C410NT1G
STMicroelectronics
STFI34N65M5
Toshiba Semiconductor and Storage
TK380P65Y,RQ
Infineon Technologies
BSZ019N03LSATMA1
Infineon Technologies
IRF9540NPBF
Vishay Siliconix
SI7113DN-T1-GE3
Vishay Siliconix
SI7450DP-T1-E3
Infineon Technologies
AUIRFR2905ZTR
Nexperia USA Inc.