IPW90R120C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 36A TO247-3
$19.43
Available to order
Reference Price (USD)
1+
$19.43000
500+
$19.2357
1000+
$19.0414
1500+
$18.8471
2000+
$18.6528
2500+
$18.4585
Exquisite packaging
Discount
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Upgrade your designs with the IPW90R120C3XKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPW90R120C3XKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-21
- Package / Case: TO-247-3
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