IPWS65R035CFD7AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 63A TO247-3-41
$22.28
Available to order
Reference Price (USD)
1+
$22.28000
500+
$22.0572
1000+
$21.8344
1500+
$21.6116
2000+
$21.3888
2500+
$21.166
Exquisite packaging
Discount
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Upgrade your designs with the IPWS65R035CFD7AXKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPWS65R035CFD7AXKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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