IR2128STRPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 8SOIC
$2.02
Available to order
Reference Price (USD)
2,500+
$1.50318
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents the IR2128STRPBF as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 12V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Analog Devices Inc.
ADP3634ARHZ-R7
NXP USA Inc.
MC33GD3100EK
Infineon Technologies
AUIRS2118STR
Infineon Technologies
IR2102PBF
Renesas Electronics America Inc
EL7252CSZ-T13
onsemi
FAN73611MX
IXYS Integrated Circuits Division
IXDD614PI
Microchip Technology
MCP14E10-E/SN
Microchip Technology
TC4428COA
Renesas Electronics America Inc