IR25606STRPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
$2.54
Available to order
Reference Price (USD)
1+
$2.54000
500+
$2.5146
1000+
$2.4892
1500+
$2.4638
2000+
$2.4384
2500+
$2.413
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents the IR25606STRPBF as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 150ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Fairchild Semiconductor
FAN3228CMPX
Renesas Electronics America Inc
R2J20651NP#G3
Microchip Technology
TC1412COA
Infineon Technologies
2ED2183S06FXUMA1
Analog Devices Inc.
LT1160IS#TRPBF
Microchip Technology
TC4428VMF
Renesas Electronics America Inc
EL7104CSZ
Analog Devices Inc./Maxim Integrated
MAX4429CPA+
Microchip Technology
MIC4424ZWM-TR
Harris Corporation