IRF40H233ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 35A 8PQFN
$0.88
Available to order
Reference Price (USD)
1+
$0.88000
500+
$0.8712
1000+
$0.8624
1500+
$0.8536
2000+
$0.8448
2500+
$0.836
Exquisite packaging
Discount
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Choose the IRF40H233ATMA1 from Infineon Technologies for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the IRF40H233ATMA1 stands out for its reliability and efficiency. Infineon Technologies's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
- Power - Max: 3.8W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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