IRF6614TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 12.7A DIRECTFET
$3.45
Available to order
Reference Price (USD)
1+
$3.45000
500+
$3.4155
1000+
$3.381
1500+
$3.3465
2000+
$3.312
2500+
$3.2775
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF6614TRPBF from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IRF6614TRPBF offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.7A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ ST
- Package / Case: DirectFET™ Isometric ST
Related Products
IXYS
IXTP4N70X2M
Fairchild Semiconductor
SI6463DQ
Panjit International Inc.
PJQ4404P_R2_00001
Toshiba Semiconductor and Storage
TK6A80E,S4X
Nexperia USA Inc.
PHT4NQ10T,135
STMicroelectronics
STD60NF06T4
Fairchild Semiconductor
ISL9N310AP3
onsemi
NTP5412NG
Diodes Incorporated
DMTH4004LK3Q-13
Panjit International Inc.