IRF6716MTRPBF
Infineon Technologies
Infineon Technologies
IRF6716 - 12V-300V N-CHANNEL POW
$1.36
Available to order
Reference Price (USD)
1+
$1.36000
500+
$1.3464
1000+
$1.3328
1500+
$1.3192
2000+
$1.3056
2500+
$1.292
Exquisite packaging
Discount
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The IRF6716MTRPBF from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRF6716MTRPBF for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MX
- Package / Case: DirectFET™ Isometric MX
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