IRF6894MTRPBF
Infineon Technologies
Infineon Technologies
IRF6894 - 12V-300V N-CHANNEL POW
$0.96
Available to order
Reference Price (USD)
1+
$0.96000
500+
$0.9504
1000+
$0.9408
1500+
$0.9312
2000+
$0.9216
2500+
$0.912
Exquisite packaging
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The IRF6894MTRPBF by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 13 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 2.1W (Ta), 54W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MX
- Package / Case: DirectFET™ Isometric MX
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